According to the report of the British "Nature" magazine website on July 25 (Beijing time), the chip maker Intel said that it will invest US $ 4.1 billion in the Netherlands-based semiconductor equipment manufacturer Asme, of which US $ 1 billion is dedicated to The research and development of extreme ultraviolet (EUV) lithography technology, the new technology is expected to reduce the size of the transistor to 1/4. The number of transistors that a chip can hold can double every few years, but this trend seems to have reached its end. One solution is to use EUV lithography to etch smaller transistors on the microchip, that is, to use ultra-short wavelength light to create patterns on the existing microchip that are four times finer than the current. The integrated circuit pattern on the chip is made by irradiating light through a mask on a silicon wafer coated with photoresist. Currently, only 22 nanometers can be manufactured using deep ultraviolet (generally about 193 nanometers) lithography technology Wide minimal pattern. The only way to etch smaller patterns on the chip is to use light waves with shorter wavelengths. By shortening the wavelength to 13.5 nanometers, the pattern on the chip can be reduced to 5 nanometers or less. To achieve this, EUV lithography technology faces challenges in chemistry, physics, and engineering. It requires a rethink of the optical instruments, photoresist, masks, and light source behind the lithography system. In view of this, Intel announced an investment of US $ 4.1 billion to accelerate the research and development of 450 mm wafer technology and EUV lithography technology, and promote the progress of silicon semiconductor technology. Almost all materials (including air) absorb light with a wavelength as short as 13.5 nanometers, so this process needs to be performed in a vacuum. And because this light cannot be guided by traditional mirrors and lenses, special mirrors need to be manufactured separately, but even these special mirrors will absorb a lot of EUV light, so this light must be very bright. The researchers explained that the dimmer the light, the longer it takes to solidify the photoresist, and because photolithography is the slowest step in the microchip manufacturing process, the intensity of the EUV light source is critical to reducing costs. The first-generation EUV light source can only provide about 10 watts of light, and it is enough to make patterns on 10 silicon wafers in 1 hour. The commercial system must reach 200 watts, and at least 100 patterns must be made in an hour. Another challenge is that the current circuit is generally etched on a 300-nm-wide silicon wafer, but Intel hopes that EUV technology can be performed on a 450-nm-wide silicon wafer, so that the number of circuits can be doubled at a time. It requires Asmell to develop new manufacturing equipment, and Intel hopes to do so in 2016. [Chief Editor Circle] Although the number of transistors that a chip can hold can double every few years, etching smaller transistors on a microchip seems to be more suitable for development. Extreme ultraviolet technology may bring us surprises. This kind of technology that is expected to make transistors "slim" 75% is definitely worth looking forward to. Transistors that can be compared with inventions such as printing, automobiles, and telephones in terms of importance, this flowering tree of electronic technology will bloom more brilliantly, or it will glow more dazzlingly. The four-year wait is not long, but the cost of one billion US dollars is expensive enough, I hope this expensive "weight loss" cost is worth the money.
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